2SD873の購入情報と機能
| この部品の機能は「Power Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SD873 Transistor | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD873
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability
APPLICATIONS ·High power amplifier applications. ·High power switching applicat |
Inchange Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SD468 | Silicon NPN Epitaxial 2SD468
Silicon NPN Epitaxial
Application
Low frequency power amplifier Complementary pair with 2SB562
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SD468
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collecto |
 Hitachi Semiconductor |
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| 2SD1470 | Silicon NPN Epitaxial/ Darlington 2SD1470
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
1
3
2SD1470
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base volta |
Hitachi Semiconductor |
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| 2SD2620 | Silicon NPN epitaxial planer type(For low-frequency amplification) Transistors
2SD2620J
Silicon NPN epitaxial planer type
Unit: mm
1.60+0.05 0.03 1.00±0.05 0.80±0.05
For low-frequency amplification I Features
High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) High emitter to base voltage VBEO SS-mini type package
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 Panasonic Semiconductor |
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| 2SD1865 | MEDIUM POWER TRANSISTOR Transistors
2SD1834 2SD1468S , 2SD1865
(94S-340-D64)
(94L-767-D65)
311
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without not |
 ROHM Semiconductor |
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