2SC5453の購入情報と機能
| この部品の機能は「Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5453 Transistor | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ordering number:EN5958
NPN Triple Diffused Planar Silicon Transistor
2SC5453
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Packa |
Sanyo Semicon Device |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC3334 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3334
2SC3334
High-Voltage Switching Applications Color TV Chroma Output Applications
Unit: mm
High breakdown voltage: VCEO = 250 V Low Cre: 1.8 pF (max) Complementary to 2SA1321
Absolute Maximum Ratings (Ta = 25°C)
Charac |
 Toshiba Semiconductor |
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| 2SC1941 | NPN SILICON TRANSISTOR |  NEC |
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| 2SC2613 | Silicon NPN Triple Diffused 2SC2613
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector |
 Hitachi Semiconductor |
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| 2SC1623W | NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
- - - High DC current gain: hFE=200TYP. High voltage: VCEO=50V. Power dissipation.(PC=200mW)
Production specification
2SC1623W
Pb
Lead-free
APPLICATIONS
- Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type N |
 Galaxy Semi-Conductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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