2SC2613の購入情報と機能
| この部品の機能は「Silicon NPN Triple Diffused」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC2613 Transistor | Silicon NPN Triple Diffused 2SC2613
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector |
Hitachi Semiconductor |
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| 2SC2613 Transistor | SILICON POWER TRANSISTOR |
SavantIC |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC1846 | Silicon NPN epitaxial planar type Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0885
φ 3.16±0.1 8.0+0.5 0.1
Unit: mm
3.2±0.2
3.8±0.3
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base op |
 Panasonic Semiconductor |
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| 2SC5335 | Silicon NPN epitaxial planer type(For low-frequency output amplification) Transistor
2SC5335(Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
0.7
4.0
s Features
q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation vol |
Panasonic Semiconductor |
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| 2SC5803 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5803
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications |
 Inchange Semiconductor Company |
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| 2SC4769 | Very High-Definition Color Display Horizontal Deflection Output Applications Ordering number:EN3665
NPN Triple Diffused Planar Silicon Transistor
2SC4769
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBI |
 Sanyo Semicon Device |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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