2SC5322の購入情報と機能
| この部品の機能は「NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5322 Transistor | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC6016 | NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
Ordering number : EN8559
2SC6016
2SC6016
Applications
NPN Epitaxial Planar Silicon Transistor
DC , DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. |
Sanyo Semicon Device |
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| 2SC5778 | NPN Transistor ( 800V, 15A ) High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
Sanyo Semicon Device |
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| 2SC5950 | Silicon NPN Epitaxial Planar Type This product complies with the RoHS Directive (EU 2002, 95, EC).
Transistors
2SC5950
Silicon NPN epitaxial planar type
For general ampli cation Complementary to 2SA2122 Features
High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic inser |
![]() Panasonic |
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| 2SC5714 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5714
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
· · · High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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