2SC5714の購入情報と機能
| この部品の機能は「TOSHIBA Transistor Silicon NPN Epitaxial Type」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5714 Transistor | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5714
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
· · · High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC4467 | Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) 2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4467 160 120 6 8 3 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4467 10max |
 Sanken electric |
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| 2SC2909 | High-Voltage Switching/ AF 60W Predriver Applications
Ordering number:ENN778F
PNP, NPN Epitaxial Planar Silicon Transistors
2SA1207, 2SC2909
High-Voltage Switching AF 60W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed.
Package Dimensions
u |
 Sanyo Semicon Device |
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| 2SC3885 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3885
DESCRIPTION ·High Breakdown Voltage: VCBO= 1400V (Min) ·High Switching Speed
APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output application |
 Inchange Semiconductor |
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| 2SC2061 | Medium Power Amp / NPN Silicon Transistor |  ROHM Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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