2SC5136の購入情報と機能
| この部品の機能は「Silicon NPN Epitaxial」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| 2SC5136 Transistor | Silicon NPN Epitaxial 2SC5136
Silicon NPN Epitaxial
ADE-208-223 1st. Edition
Application
VHF, UHF wide band amplifier
Features
High gain bandwidth product fT = 3.8 GH- typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC5136
Absolu |
Hitachi Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC4155 | FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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 ETC |
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| 2SC5181 | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low current consumption and high gain |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GH- |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 G |
 NEC |
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| 2SC4584 | Switching Power Transistor(6A NPN) SHINDENGEN
Switching Power Transistor
HFX Series
(TP6W80HFX)
6A NPN
2SC4584
OUTLINE DIMENSIONS
Case : ITO-3P Unit : mm
RATINGS
●Absolute Maximum Ratings Item
Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curren |
 Shindengen Electric Mfg.Co.Ltd |
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| 2SC3587 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current re |
NEC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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