2SC5181の購入情報と機能
| この部品の機能は「NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| 2SC3862 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3862
TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
2SC3862
Unit: mm
· Exchange of emitter for base in 2SC3120
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-b |
Toshiba Semiconductor |
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| 2SC4901 | Silicon NPN Epitaxial 2SC4901
Silicon NPN Epitaxial
Application
UHF , VHF wide band amplifier
Features
High gain bandwidth product fT = 9 GH- Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC4901
Absolute Maximum Ratings (Ta |
Hitachi Semiconductor |
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| 2SC4265 | Silicon NPN Epitaxial 2SC4265
Silicon NPN Epitaxial
Application
VHF RF amplifier, Local oscillator, Mixer
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC4265
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector |
Hitachi Semiconductor |
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| 2SC3241 | NPN EPITAXIAL PLANAR TYPE TRANSISTOR 1. Collector to Base Voltage : Vcbo = 50 V 2. Collector to Emitter Voltage : Vceo = 20 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 18 A 5. RF POWER TRANSISTOR |
Mitsubishi Electric Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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