AO6802 データシート PDF
この部品の機能は「Dual N-Channel Enhancement Mode Field Effect Transistor」です。
AO6802 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6802 | Dual N-Channel Enhancement Mode Field Effect Transistor AO6802 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
provide
Features
VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 75mΩ (VGS = 10V) RDS(ON) < 115mΩ (VGS = 4.5V)
The AO6802 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is |  |  |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6605 | Complementary Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors | |
| AO6804 | Dual N-Channel Enhancement Mode Field Effect Transistor AO6804 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
provide
Features
VDS = 20V ID = 5.0A (VGS = 4.5V) Typical Rds RDS(ON) < 24mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 4.0V) RDS(ON) < 28mΩ (VGS = 3.1V) RDS(ON) < 31mΩ (VGS = 2.5V)
The AO6804 uses advanced trench | Alpha & Omega Semiconductors | |
| AO6402A | 30V N-Channel MOSFET | Alpha & Omega Semiconductors | |
| AO6409L | P-Channel Enhancement Mode Field Effect Transistor Rev 2: Nov 2004
AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a loa | Alpha & Omega Semiconductors | |
| AO6602 | Complementary Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors | |
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