AO6602の購入情報と機能
| この部品の機能は「Complementary Enhancement Mode Field Effect Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| AO6810 | Dual N-Channel Enhancement Mode Field Effect Transistor AO6810 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V)
The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is |
Alpha & Omega Semiconductors |
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| AO6402L | N-Channel Enhancement Mode Field Effect Transistor Rev 3:Nov 2004
AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Produ |
Alpha & Omega Semiconductors |
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| AO6414 | N-Channel Enhancement Mode Field Effect Transistor AO6414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard pro |
Alpha & Omega Semiconductors |
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| AO6604 | 20V Complementary MOSFET AO6604
20V Complementary MOSFET
General Description
Product Summary
The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
N-Channel VDS= 20V ID= 3.4A (VGS=4.5 |
Alpha & Omega Semiconductors |
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