AO6604 データシート PDF

AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. N-Channel VDS= 20V ID= 3.4A (VGS=4.5

AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-

AO6402A 30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which ma

AO6602 Complementary Enhancement Mode Field Effect Transistor General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO660