AO6602 データシート PDF
この部品の機能は「Complementary Enhancement Mode Field Effect Transistor」です。
AO6602 Datasheet |
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6602 | Complementary Enhancement Mode Field Effect Transistor AO6602 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO660 |  |  |
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| AO6414 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors | |
| AO6604 | 20V Complementary MOSFET AO6604
20V Complementary MOSFET
General Description
Product Summary
The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
N-Channel VDS= 20V ID= 3.4A (VGS=4.5 | Alpha & Omega Semiconductors | |
| AO6800 | Dual N-Channel Enhancement Mode Field Effect Transistor |  ETC | |
| AO6401 | P-Channel Enhancement Mode Field Effect Transistor AO6401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Pr | Alpha & Omega Semiconductors | |
| AO6407 | P-Channel Enhancement Mode Field Effect Transistor | ETC | |
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