TPCT4202の購入情報と機能
| この部品の機能は「Lithium Ion Battery Applications」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TPCT4202 Battery | Lithium Ion Battery Applications w
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Toshiba |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCF8004 | MOSFET, Transistor TPCF8004
MOSFETs Silicon N-Channel MOS (U-MOS )
TPCF8004
1. Applications
Lithium-Ion Secondary Batteries
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = |
 Toshiba Semiconductor |
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| TPC8A07-H | High-Efficiency DC/DC Converter Applications TPC8A07-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H)
TPC8A07-H
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Small footprint due to a small and thin package High-speed sw |
Toshiba Semiconductor |
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| TPCC8067-H | MOSFET, Transistor TPCC8067-H
MOSFETs Silicon N-Channel MOS (U-MOS -H)
TPCC8067-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.9 nC (typ.) Low drain-source on-resistance: RDS(ON |
Toshiba |
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| TPCP8501 | Field Effect Transistor Silicon MOS Type TPCP8501
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8501
Switching Applications DC-DC Converter Applications
High DC current gain : hFE = 100 to 300 (IC = 0.3 A)
2.4±0.1
Unit: mm
0.33±0.05 0.05 M A
8 5
High-speed switching : tf = 100 ns (typ.)
0.475
1 4
Maximum Ratings (Ta = 25°C)
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Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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