TPCS8201の購入情報と機能

TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCF8004 1. Applications Lithium-Ion Secondary Batteries 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS =

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed sw

TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8067-H 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 1.9 nC (typ.) Low drain-source on-resistance: RDS(ON

TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications DC-DC Converter Applications High DC current gain : hFE = 100 to 300 (IC = 0.3 A) 2.4±0.1 Unit: mm 0.33±0.05 0.05 M A 8 5 High-speed switching : tf = 100 ns (typ.) 0.475 1 4 Maximum Ratings (Ta = 25°C)