TPCP8204の購入情報と機能
| この部品の機能は「Field Effect Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
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| TPCS8105 | Silicon N Channel MOS Type Field Effect Transistor TPCS8105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8105
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.) Hi |
Toshiba Semiconductor |
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| TPCC8007 | MOSFET, Transistor TPCC8007
MOSFETs Silicon N-channel MOS (U-MOS )
TPCC8007
1. Applications
Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 A (max) (VDS = |
Toshiba Semiconductor |
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| TPCP8401 | Field Effect Transistor Silicon MOS Type TPCP8401
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ , π -MOS Ⅵ)
TPCP8401
○ Switching Regulator Applications ○ Load Switch Applications
Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Sma |
Toshiba Semiconductor |
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| TPCA8085 | MOSFET, Transistor TPCA8085
MOSFETs Silicon N-channel MOS (U-MOS )
TPCA8085
1. Applications
Motor Drivers Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancem |
![]() Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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