TPCP8009の購入情報と機能
| この部品の機能は「Power MOSFETs」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCP8603 | Field Effect Transistor Silicon MOS Type TPCP8603
TOSHIBA Transistor Silicon PNP Epitaxial Type
TPCP8603
High-Speed Switching Applications DC, DC Converters Strobe Applications
High DC current gain: hFE = 120~300 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 120 ns (typ.) |
Toshiba Semiconductor |
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| TPCA8128 | Lithium Ion Battery Applications TPCA8128
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅵ)
TPCA8128
Lithium Ion Battery Applications Power Management Switch Applications
8
Unit: mm
1.27 0.4 ± 0.1 5 0.05 M A
Small footprint due to compact and slim package Low leakage current : IDSS = 10 μA (max) (VD |
Toshiba Semiconductor |
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| TPCP8110 | MOSFET, Transistor TPCP8110
MOSFETs Silicon P-Channel MOS (U-MOS )
TPCP8110
1. Applications
Motor Drivers Mobile Equipment
2. Features
(1) (2) (3) (4) (5) Small, thin package Small gate charge: QSW = 14 nC (typ.) Low drain-source on-resistance: RDS(ON) = 30.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = - |
Toshiba Semiconductor |
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| TPCA8059-H | MOSFET, Transistor TPCA8059-H
MOSFETs Silicon N-Channel MOS (U-MOS -H)
TPCA8059-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source on-resistance: RDS(ON |
![]() Toshiba |
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