TPCF8B01の購入情報と機能
| この部品の機能は「Multi-Chip Device Silicon P Channel MOS Type」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCF8A01 | Notebook PC Applications TPCF8A01
TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) , Schottky Barrier Diode
TPCF8A01
Notebook PC Applications Portable Equipment Applications
Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage cu |
Toshiba Semiconductor |
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| TPCA8021-H | High Efficiency DC/DC Converter Applications TPCA8021-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8021-H
High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3 0.5±0.1 8 1.27 0.4±0.1 5
Unit: mm
0.05 M A
Small footprint due |
Toshiba Semiconductor |
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| TPCC8137 | MOSFET, Transistor TPCC8137
MOSFETs Silicon P-Channel MOS (U-MOS )
TPCC8137
1. Applications
Power Management Switches
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth |
Toshiba Semiconductor |
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| TPC8303 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U MOSII)
TPC8303
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Low drain source ON resistance : RDS (ON) = 27 mΩ (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 7 S (typ.) Low leakage c |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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