TPC8401の購入情報と機能
| この部品の機能は「TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TPC8401 Transistor | TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII) TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U MOSII)
TPC8401
Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs
Low drain source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 14 mΩ (typ.) High forward trans |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCS8213 | Silicon N Channel MOS Type Field Effect Transistor TPCS8213
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCS8213
Lithium Ion Battery Applications
Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage cu |
Toshiba Semiconductor |
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| TPC8202 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE−MOSVI) TPC8202
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSVI)
TPC8202
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain source ON resistance l Low leakage current l Enhancement |
Toshiba Semiconductor |
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| TPC6011 | Field Effect Transistor TPC6011
TOSHIBA Field Effect Transistor
TPC6011
Silicon N Channel MOS Type (U-MOSIV)
Notebook PC Applications Portable Equipment Applications
Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 |
 Toshiba |
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| TPC8107 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
· · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) Hig |
Toshiba Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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