TPC8125の購入情報と機能
| この部品の機能は「Field Effect Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TPCF8304 | Notebook PC Applications
TPCF8304
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304
Notebook PC Applications Portable Equipment Applications
Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = 10 μ |
Toshiba Semiconductor |
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| TPCA8015-H | High Efficiency DC/DC Converter Applications TPCA8015-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8015-H
High-Efficiency DC/DC Converter Applications
0.5±0.1 8 1.27 0.4±0.1 5
Unit: mm
0.05 M A
6.0±0.3
Small footprint due to small and thin package High-speed switching Small gat |
Toshiba Semiconductor |
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| TPCC8106 | MOSFET, Transistor TPCC8106
MOSFETs Silicon P-Channel MOS (U-MOS )
TPCC8106
1. Applications
Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) ( |
Toshiba Semiconductor |
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| TPC8228-H | MOSFET, Transistor TPC8228-H
MOSFETs Silicon N-Channel MOS (U-MOS -H)
TPC8228-H
1. Applications
DC-DC Converters CCFL Inverters
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.6 nC (typ.) Low drain-source on-resistance: RDS(ON) = 38 mΩ (typ.) Low leakage cu |
![]() Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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