TC59SM804BFTLの購入情報と機能
| この部品の機能は「SDRAM」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TC59SM804BFTL Data | SDRAM
TC59SM816, 08, 04BFT, BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRI |
Toshiba |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TC55V16100FT-10 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
 Toshiba Semiconductor |
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| TC55V8512J | (TC55V8512J/FT) 8-Bit CMOS SRAM TC55V8512J, FT-12,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION
The TC55V8512J, FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced ci |
Toshiba |
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| TC55V328BJ | (TC55V328BJ/BFT) 8-Bit CMOS SRAM |
Toshiba |
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| TC55B328J | 32K x 8-Bit BiCMOS Static RAM TOSHIBA
1l:55B328P, ]-10, 12
SILICON GATE BiCMOS
32,768 WORD x 8 BIT BiCMOS STATIC RAM
Description
The TC55B328P, J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced ci |
Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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