TC58DVM92A1FT0の購入情報と機能
| この部品の機能は「512M-Bit CMOS NAND EPROM」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TC58DVM92A1FT0 CMOS | 512M-Bit CMOS NAND EPROM TC58DVM92A1FTI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M u 8 BITS) CMOS NAND E PROM DESCRIPTION
The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 b |
Toshiba |
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関連検索結果
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| TC51832AP | Silicon Gate CMOS | Toshiba |
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TC59LM836DMB-30,-33,-40
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM
2,097,152-WORDS × 4 BANKS × 36-BITS Network FCRAM DESCRIPTION
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 Toshiba Semiconductor |
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| TC500 | Precision Analog Front Ends TC500, A, 510, 514
Precision Analog Front Ends
Features
Precision (up to 17 bits) A, D Converter “Front End” 3-Pin Control Interface to Microprocessor Flexible: User Can Trade-off Conversion Speed for Resolution Single-Supply Operation (TC510, TC514) 4 Input, Differential Analog MUX (TC514) |
 Microchip Technology |
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| TC58BYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM TC58BYG1S3HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BYG1S3HBAI4 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × |
Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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