TC55NEM216AFTN55の購入情報と機能
| この部品の機能は「(TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TC55NEM216AFTN55 Gate | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS TC55NEM216AFTN55,70
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon g |
Toshiba Semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TC59LM836DMB | Network FCRAM ( t : )
TC59LM836DMB-30,-33,-40
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM
2,097,152-WORDS × 4 BANKS × 36-BITS Network FCRAM DESCRIPTION
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network FCRAMTM containing 301,989,888 memor |
Toshiba Semiconductor |
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| TC500 | Precision Analog Front Ends TC500, A, 510, 514
Precision Analog Front Ends
Features
Precision (up to 17 bits) A, D Converter “Front End” 3-Pin Control Interface to Microprocessor Flexible: User Can Trade-off Conversion Speed for Resolution Single-Supply Operation (TC510, TC514) 4 Input, Differential Analog MUX (TC514) |
 Microchip Technology |
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| TC58BYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM TC58BYG2S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × |
 Toshiba |
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| TC5116400BSJ | 4194304 word x 4 Bit Dynamic Ram w
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Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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