TC551001CP-55Lの購入情報と機能
| この部品の機能は「8-BIT STATIC RAM」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TC58NVG5D2FTAI0 | 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG5D2FTAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
32 GBIT (4G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION
The TC58NVG5D2 is a single 3.3 V 32 Gbit (36,274,176,000 bits) NAND Electrically Erasable and Programmable Read-Only Memo |
![]() Toshiba |
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| TC59SM816CMB | SDRAM
TC59SM816, 08, 04CMB, CMBL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRI |
![]() Toshiba |
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| TC5501D-1 | 256 Word x 4-Bit CMOS RAM |
![]() Toshiba |
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| TC58NVG0S3AFT00 | 1 GBit CMOS NAND EPROM
TC58NVG0S3AFT00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
1GBIT (128M u 8BITS) CMOS NAND E PROM DESCRIPTION
The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) by |
![]() Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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