TC551001BFL-70の購入情報と機能
| この部品の機能は「SILICON GATE CMOS STATIC RAM」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| TC551001BFL-70 Gate | SILICON GATE CMOS STATIC RAM TOSHIBA
TC551001BPL, BFL, BFTL, BTRL-70, 85, 10
SILICON GATE CMOS
131,072 WORD x 8 BIT STATIC RAM
Description
The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide |
Toshiba |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| TC58NYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM TC58NYG2S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × |
Toshiba |
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| TC59SM916AFTL | SDRAM
TC59SM916, 08, 04AFT, AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
8,388,608-WORDS × 4BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 33,554,432-WORDS × 4BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPT |
Toshiba |
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| TC58NVG1S3BFT00 | (TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROM w
m INTEGRATED CIRCUIT SILICON GATE CMOS o TENTATIVE TOSHIBA MOS DIGITAL .c U × 16 BIT) CMOS NAND E2PROM 2 GBIT (256M × 8 BIT, 128M 4 t DESCRIPTION e e h S a at .D w w
FEATURES
Organization Memory cell array Register Page size Block size TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K |
Toshiba |
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| TC59SM716AFT | SDRAM
TC59SM716, 08, 04AFT, AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
2,097,152-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIP |
Toshiba |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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