TC2608の購入情報と機能

TC2996A REV1_20070503 1.6 GH- 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES 12 W Typical Power at 1.6 GH- 13 dB Typical Linear Power Gain at 1.6 GH- High Linearity:IP3 = 50 dBm Typical High Power Added Efficiency:Nominal PAE of 40 % Suitable for High Reliability Application Wg = 30

TOSHIBA Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature DRAM core is easily integrated into a broad range of applications through utilization of different

- Preliminary Datasheet - TC2998E PRE.1_01, 21, 2008 2.5-2.7GH- 20W Packaged GaAs Power FETs FEATURES 20 W Typical Power 10.5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998E is

TC2571 REV.2_04, 12, 2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES 1W Typical Output Power at 6 GH- 11dB Typical Power Gain at 6 GH- High Linearity: IP3 = 40 dBm Typical at 6 GH- High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Appl