SPP3407Dの購入情報と機能
| この部品の機能は「P-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( データシート PDF )

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| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| SPP80N03L | Power Transistor
Preliminary data
SPP80N03L SPB80N03L
SIPMOS ® Power Transistor N-Channel
Enhancement mode
Avalanche rated Logic Level dv, dt rated 175°C operating temperature
Type SPP80N03L SPB80N03L
Pin 1 G
Pin 2 D
Pin 3 S
VDS
30 V
ID
80 A
RDS(on)
0.008 Ω 0.006 Ω
@ VGS
Package P-TO220-3- |
Siemens Semiconductor |
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| SPP15P10P | SIPMOS Small-Signal-Transistor
SPP15P10P SIPMOS Small-Signal-Transistor
Feature P-Channel Enhancement mode Avalanche rated dv, dt rated
Product Summary VDS RDS(on) ID -100 0.24 -15
PG-TO220-3-1
V Ω A
Drain pin 2
Type SPP15P10P
Package PG-TO220-3-1
Ordering Code Q67042-S4166
Gate pin1 Source pin 3
Maximum Ratings, |
![]() Infineon Technologies |
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| SPP4953B | P-Channel Enhancement Mode MOSFET SPP4953B
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4953B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devic |
![]() SYNC POWER |
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| SPP1013 | P-Channel Enhancement Mode MOSFET
SPP1013
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior sw |
![]() SYNC POWER |
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