SIR774DPの購入情報と機能
| この部品の機能は「N-Channel 30V (D-S) MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| SIR774DP MOSFET | N-Channel 30V (D-S) MOSFET New Product
SiR774DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30
RDS(on) ( ) Max. 0.0026 at VGS = 10 V 0.0034 at VGS = 4.5 V
ID (A)a 40 40
PowerPAK® SO-8
Qg (Typ.) 28.5 nC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3G
4
Bottom View
FEATURES |
Vishay |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| SIR872DP | N-Channel 150 V (D-S) MOSFET SiR872DP
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 150 RDS(on) ( ) Max. 0.0180 at VGS = 10 V 0.0200 at VGS = 7.5 V ID (A) 53.7 51 Qg (Typ.) 31.5 nC
FEATURES
TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please |
Vishay |
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| SiR494DP | N-Channel 12 V (D-S) MOSFET New Product
SiR494DP
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 12 RDS(on) (Ω) 0.0012 at VGS = 10 V 0.0017 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 50 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 |
Vishay |
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| SIR330DP | N-Channel 30V (D-S) MOSFET New Product
N-Channel 30 V (D-S) MOSFET
SiR330DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ( )
0.0056 at VGS = 10 V 30
0.0075 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a, g 35g 35g
Qg (Typ.) 11.2 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
1 |
Vishay |
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| SiR888DP | N-Channel 25-V (D-S) MOSFET New Product
N-Channel 25-V (D-S) MOSFET
SiR888DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.00325 at VGS = 10 V 25
0.0040 at VGS = 4.5 V
ID (A)a 40g 40g
Qg (Typ.) 35.5 nC
FEATURES
Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested
RoHS
COMPLIANT
P |
Vishay |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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