SIR422DPの購入情報と機能
| この部品の機能は「N-Channel 40-V (D-S) MOSFET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| SIR422DP MOSFET | N-Channel 40-V (D-S) MOSFET N-Channel 40-V (D-S) MOSFET
SiR422DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0066 at VGS = 10 V 40
0.008 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a 40 40
Qg (Typ.) 16.1 nC
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View Ordering Information: SiR422DP-T1-GE3 (Lead |
Vishay |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| SIR472DP | N-Channel MOSFET SiR472DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 6.8 nC
FEATURES
Halogen-free TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile Optimized |
 Vishay Siliconix |
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| SIR172ADP | N-Channel 30V (D-S) MOSFET N-Channel 30 V (D-S) MOSFET
SiR172ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ( ) Max.
30 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V
ID (A)a, g 24 24
Qg (Typ.) 12.8 nC
PowerPAK SO-8
FEATURES
TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package
with Low 1.07 mm Profi |
Vishay |
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| SIR878DP | N-Channel 100 V (D-S) MOSFET New Product
SiR878DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) ( ) 0.014 at VGS = 10 V 0.0148 at VGS = 7.5 V 0.019 at VGS = 4.5 V ID (A)a 40 38 34 13.6 nC Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 |
Vishay |
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| SIR67-21C-L9-TR10 | Top Infrared LED Technical Data Sheet
Top Infrared LED
SIR67-21C, L9, TR10
Features
Peak wavelength λp=875nm. Low forward voltage. Compatible with infrared and vapor phase reflow solder process. Pb free The product itself will remain within RoHS compliant version.
Descriptions
SIR67-21C, L9, TR10 is an infrar |
 Everlight Electronics |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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