SIHFPC50LCの購入情報と機能
| この部品の機能は「Power MOSFET, Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| SIHFPC50LC MOSFET | Power MOSFET, Transistor IRFPC50LC, SiHFPC50LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 84 18 36 Single
D
FEATURES
600 0.60
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss I |
Vishay Siliconix |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| SiHF9Z34 | Power MOSFET, Transistor Power MOSFET
IRF9Z34, SiHF9Z34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 60 VGS = - 10 V
34 9.9 16 Single
0.14
S
TO-220AB
G
S D G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV, dt Rati |
Vishay Siliconix |
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| SiHB20N50E | E Series Power MOSFET www.vishay.com
SiHB20N50E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
92 10 19 Single
0.184
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) |
 Vishay |
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| SiHFIBC30G | Power MOSFET, Transistor IRFIBC30G, SiHFIBC30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single
D
FEATURES
600 2.2
Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 |
Vishay Siliconix |
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| SiHF840AS | Power MOSFET, Transistor IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
38 9.0 18 Single
I2PAK (TO-262)
D2PAK (TO-263)
0.85 D
G
SD
D G
S
G
S N-Channel MOSFET
FEATURES
Halogen-free According |
Vishay Siliconix |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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