PMEM4010PDの購入情報と機能
| この部品の機能は「PNP transistor/Schottky diode module」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| PMEM4010PD Transistor | PNP transistor/Schottky diode module
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4010PD PNP transistor, Schottky diode module
Product speci cation 2002 Oct 28
Philips Semiconductors
Product speci cation
PNP transistor, Schottky diode module
FEATURES 600 mW total power dissipation High current capability |
NXP Semiconductors |
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関連検索結果
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| PMEG3020EH | 2A ultra low VF MEGA Schottky barrier rectifiers PMEG3020EH; PMEG3020EJ
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Rev. 03 31 May 2005 Product data sheet
1. Product pro le
1.1 General description
Planar Maximum Ef ciency General Application (MEGA) Schottky barrier recti ers with an integrated guard ring for stress protection encaps |
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| PME-1209SZ | 0.25 Watt DC-DC Converter www.make-ps.com
E-mail:[email protected]
Series PME-S-Z
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FEATURES: RoHS compliant 4 Pin SIP Package Low ripple and noise High efficiency up to 72%
Operating temperature -40oC to + 85oC Input , Output isolation 1000 and 3000VDC Pin compatible with multiple manufa |
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| PMEG3005EJ | 0.5 A very low VF MEGA Schottky barrier rectifiers PMEGxx05EH, EJ series
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Rev. 01 12 April 2005 Product data sheet
1. Product pro le
1.1 General description
Planar Maximum Ef ciency General Application (MEGA) Schottky barrier recti er with an integrated guard ring for stress protection encapsulate |
NXP Semiconductors |
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| PMEG6030EP | 3A low VF MEGA Schottky barrier rectifier PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 21 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD12 |
NXP Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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