PBSS5330PAの購入情報と機能
| この部品の機能は「3A PNP low VCEsat (BISS) transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| PBSS5330PA Transistor | 3A PNP low VCEsat (BISS) transistor HUSON3
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power ca |
NXP Semiconductors |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| PBSS4540Z | NPN medium power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PBSS4540Z NPN medium power transistor
Preliminary speci cation 1999 Aug 04
Philips Semiconductors
Preliminary speci cation
NPN medium power transistor
FEATURES High current (max. 10 A) Low voltage (max. 40 V) Low VCEsat. APPLICATI |
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| PBSS4220V | 2A NPN low VCEsat (BISS) transistor
PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
Rev. 01 6 February 2006 Product data sheet
1. Product pro le
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V.
1.2 Featur |
NXP Semiconductors |
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| PBSS8110Z | NPN low VCEsat (BISS) transistor
PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 26 April 2004 Product data sheet
1. Product pro le
1.1 General description
NPN low VCEsat transistor in a plastic SOT223 (SC-73) package.
1.2 Features
s s s s SOT223 package Low collector-emitter saturation voltage VCEsat High collec |
NXP Semiconductors |
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| PBSS4032SP | 4.8A PNP/PNP Low V_CEsat (BISS) Transistor t.in
PBSS4032SP
30 V, 4.8 A PNP, PNP low VCEsat (BISS) transistor
Rev. 1 14 July 2010 Product data sheet
1. Product profile
1.1 General description
PNP, PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Tabl |
NXP Semiconductors |
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