MMBT8050の購入情報と機能
| この部品の機能は「NPN Silicon Epitaxial Planar Transistor」です。 |
|
|
製品の詳細 ( データシート PDF )

PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MMBFJ310LT1 | JFET VHF/UHF Amplifier Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFJ309LT1, D
JFET VHF, UHF Amplifier Transistor
N Channel
3 GATE
MMBFJ309LT1 MMBFJ310LT1
2 SOURCE
1 DRAIN
3 1
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc |
Motorola Semiconductors |
![]() |
| MMBZ5254B | 350mW SURFACE MOUNT ZENER DIODE Features
Planar Die Construction 350mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Notes 3 & 4) Qualified to AEC-Q101 Standar |
![]() Diodes Incorporated |
![]() |
| MMBTH81 | PNP RF Transistor MPSH81 , MMBTH81
Discrete POWER & Signal Technologies
MPSH81
MMBTH81
C
E C E
TO-92
B
SOT-23
Mark: 3D
B
PNP RF Transistor
This device is designed for general RF amplifier and mixer applications to 250 mH- with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
Absolut |
![]() Fairchild |
![]() |
| MMB3505 | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
MMB3505 THRU MMB3510
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes
FEATURES
* Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge |
![]() Dc Components |
![]() |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|



