MMBT5089の購入情報と機能
| この部品の機能は「Silicon Epitaxial Planar Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| MMBT5089 Transistor | Silicon Epitaxial Planar Transistor Production specification
Silicon Epitaxial Planar Transistor
FEATURES
- Excellent HFE Linearity. - Power dissipation.(PC=0.2W).
Pb
Lead-free
MMBT5088, 5089
APPLICATIONS
- This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50 |
Galaxy Microelectronics |
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| MMBT5089 Transistor | NPN Transistors |
HORNBY |
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| MMBT5089 Transistor | Silicon NPN transistor |
BLUE ROCKET ELECTRONICS |
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| MMBT5089 Amplifier | NPN General Purpose Amplifier |
CHINA BASE |
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| MMBT5089 Transistor | Low Noise NPN Transistor |
WEITRON |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MMBR920 | NPN SIlicon High Frequency Transistor |  Motorola Semiconductors |
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| MMBZ5257 | SURFACE MOUNT ZENER DIODES/SOT-23 |  Jinan Gude Electronic Device |
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| MMBTSC2412 | Silicon Epitaxial Planar Transistor MMBTSC2412
NPN Silicon Epitaxial Planar Transistor
for general purpose applications. The transistor is subdivided into three groups Q, R and S. according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltag |
 SEMTECH ELECTRONICS |
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| MMBD7000LT1 | Dual Switching Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD7000LT1, D
Dual Switching Diode
MMBD7000LT1
Motorola Preferred Device
1 ANODE
3 CATHODE, ANODE
2 CATHODE
3 1 2
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(sur |
Motorola Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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