MMBT4124の購入情報と機能
| この部品の機能は「SMD General Purpose Transistor」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| MMBT4124 Transistor | SMD General Purpose Transistor SMD General Purpose Transistor (NPN)
MMBT4124
SMD General Purpose Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram
Maxi |
TAITRON |
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| MMBT4124 Transistor | NPN Silicon Epitaxial Planar Transistor |
MEI SEMI |
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| MMBT4124 Transistor | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
TRSYS |
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| MMBT4124 Transistor | NPN (GENERAL PURPOSE TRANSISTOR) |
Samsung |
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| MMBT4124 Transistor | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
Diodes Incorporated |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MMBT5401W | High Voltage Transistor MMBT5401W
High Voltage Transistor
PNP Silicon
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable
These Devices are Pb Free, Halogen Free, BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Sy |
 ON Semiconductor |
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| MMB251W | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
MMB2505W THRU MMB2510W
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes
FEATURES
* Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surg |
 Dc Components |
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| MMBZ5250B | 350mW SURFACE MOUNT ZENER DIODE Features
Planar Die Construction 350mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Notes 3 & 4) Qualified to AEC-Q101 Standar |
Diodes Incorporated |
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| MMBTA45 | (MMBTA44 / MMBTA45) HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO.,LTD. MMBTA44, 45
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94, 93 *Power Dissipation: PD(max)=350mW
3
NPN EPITAXIAL SILICON TRANSISTOR
1 2
MARKING |
 Unisonic Technologies |
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