MMBFJ201の購入情報と機能
| この部品の機能は「N-Channel General Purpose Amplifier」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| MMBFJ201 Amplifier | N-Channel General Purpose Amplifier |
Fairchild |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MMB251W | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
MMB2505W THRU MMB2510W
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes
FEATURES
* Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surg |
 Dc Components |
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| MMBT9013 | 1W OUTPUT AMPLIFIER OF POTABLE RADIOS UNISONIC TECHNOLOGIES CO., LTD
MMBT9013
NPN SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
3
FEATURES
*High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012
1 2
SOT-23
(JEDEC TO- |
 Unisonic Technologies |
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| MMBT3904WT1 | General Purpose Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document MMBT3904WT1, D
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323, SC 70 which is designed for low power surface mount applications.
NP |
 Motorola Semiconductors |
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| MMBD1701 | High Conductance Low Leakage Diode MMBD1701, A , 1703, A , 1704, A , 1705, A
Discrete POWER & Signal Technologies
MMBD1701, A , 1703, A , 1704, A , 1705, A
3
CONNECTION DIAGRAMS
3
1
85
2
1701
3
3
1703
1
2 NC 3
1 3
2
2
1704
1705
SOT-23
1
MMBD1701 MMBD1703 MMBD1704 MMBD1705
MARKING 85 MMBD1701A 87 MMBD1703A 88 |
Fairchild |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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