MJD29の購入情報と機能
| この部品の機能は「General Purpose Amplifier Low Speed Switching Applications」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| MJD29 Amplifier | General Purpose Amplifier Low Speed Switching Applications MJD29, 29C
MJD29, 29C
General Purpose Amplifier Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP29 and TIP29C
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
NPN Epitaxial Silicon |
Fairchild |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MJD31T4 | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD31, D
Complementary Power Transistors
MJD31,C* PNP MJD32,C*
*Motorola Preferred Device
NPN
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surfa |
 Motorola Semiconductors |
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| MJD117L | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) SEMICONDUCTOR
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
MJD117, L
EPITAXIAL PLANAR PNP TRANSISTOR
I J
FEATURES
High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage.
Q
C
K
Complementary to MJD |
.gif) KEC(Korea) |
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| MJD6039T4 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD6036, D
Complementary Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, |
Motorola Semiconductors |
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| MJD128T4G | Complementary Darlington Power Transistor
MJD128T4G (PNP)
Preferred Device
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Features http:, , onsemi.com
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB Continuous Peak IC IB PD PD TJ, Tstg Value 120 120 5 8 16 120 20 0.16 1.75 |
 ON Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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