MJ8504の購入情報と機能

この部品の機能は「(MJ8504 / MJ8505) NPN Silicon Power Transistor」です。


製品の詳細 ( データシート PDF )

部品番号 部品情報 メーカー PDF / カテゴリー
MJ8504 Transistor(MJ8504 / MJ8505) NPN Silicon Power Transistor

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datasheet MJ8504 pdf
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datasheet MJ8504 pdf
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datasheet MJ8504 pdf
datasheet MJ8504 download

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関連検索結果

部品番号 部品情報 メーカー PDF
MJ8503 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critica
datasheet MJ8503 pdf
MJ8100 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package

MJ8100 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. I
datasheet MJ8100 pdf
MJ8500 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critica
datasheet MJ8500 pdf
MJ8501 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critica
datasheet MJ8501 pdf


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