MJ8504の購入情報と機能
| この部品の機能は「(MJ8504 / MJ8505) NPN Silicon Power Transistor」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MJ8503 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critica |
Inchange Semiconductor |
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| MJ8100 | Bipolar PNP Device in a Hermetically sealed TO39 Metal Package MJ8100
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 60V
5.08 (0.200) typ.
I |
![]() Seme LAB |
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| MJ8500 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critica |
Inchange Semiconductor |
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| MJ8501 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critica |
Inchange Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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