MJ3202の購入情報と機能
| この部品の機能は「Bipolar NPN Device in a Hermetically sealed TO66 Metal Package」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MJ3771 | Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=1V(Max)@Ic=15A ·Low Leakage Icbo=1mA(max)@50V ·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and |
Inchange Semiconductor |
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| MJ3101 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package MJ3101
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
B |
![]() Seme LAB |
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| MJ3772 | Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@100V ·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier a |
Inchange Semiconductor |
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| MJ3281A | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ3281A, D
Designer's
Complementary NPN-PNP Silicon Power Bipolar Transistor
The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for 100 W Audio F |
Motorola Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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