MDD142の購入情報と機能
| この部品の機能は「HIgh Power Diode Modules」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| MDD142 Diode | HIgh Power Diode Modules
MDD 142
High Power Diode Modules
IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V
2 1 3
VRSM V 900 1300 1500 1700 1900
VRRM V 800 1200 1400 1600 1800
Type
3
1
2
MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1
Symbol IFRMS IFAVM IFSM
Test Conditions TVJ = TVJM TC = 10 |
IXYS Corporation |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MDD44-08N1B | HIgh Power Diode Modules
Diode Modules
MDD 44
IFRMS = 2x 100 A IFAVM = 2x 64 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 44-08N1 B MDD 44-12N1 B MDD 44-14N1 B MDD 44-16N1 B MDD 44-18N1 B
3 1 2 TO-240 AA
3
2
1
Symbol IFRMS IFAVM I
FSM
i2dt
TVJ T
VJM
Tstg VISOL
Md Weig |
IXYS Corporation |
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| MDD26-12N1B | HIgh Power Diode Modules
Diode Modules
MDD 26
IFRMS = 2x 60 A IFAVM = 2x 36 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 26-08N1 B MDD 26-12N1 B MDD 26-14N1 B MDD 26-16N1 B MDD 26-18N1 B
3 1 2 TO-240 AA
3
2
1
Symbol IFRMS I
FAVM
IFSM
i2dt
TVJ TVJM Tstg VISOL
Md Weight |
IXYS Corporation |
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| MDD1903 | Single N-channel Trench MOSFET MDD1903 Single N-Channel Trench MOSFET 100V
Preliminary Subject to change without notice
MDD1903
Single N-channel Trench MOSFET 100V, 11A, 120mΩ
General Description
The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching |
 MagnaChip |
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| MDDQ02 | Power RF Amplifiers
polyfet rf devices
Power RF Amplifiers
Power = 15.0 Watts Bandwidth = Gain = 25.0 dB 30 to 512 Mh- Vdd = 28.0 Volts
MDDQ02
50 ohms Input, Output Impedance
Description
The MDDQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is su |
 Polyfet RF Devices |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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