MBRT20045の購入情報と機能
| この部品の機能は「Silicon Power Schottky Diode」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| MBRT20045 Diode | Silicon Power Schottky Diode MBRT20045 thru MBRT200100R
Silicon Power Schottky Diode
Features
High Surge Capability Types up to 100 V VRRM Isolation Type Package Three Tower Package
VRRM = 20 V - 100 V IF = 200 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetit |
GeneSiC |
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| MBRT20045 Diode | Silicon Power Schottky Diode |
America Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBRFH3045CT | Schottky Barrier Rectifier, Diode SUZHOU GOOD-ARK ELECTRONIC CO., LTD
州固 子股 有限公司
GOODARK Type MBRH3045CT , MBRFH3045CT
Product Specification
Construction : Schottky Barrier Rectifier Application : For General Purpose （Manufacturer）: Suzhou Goodark Electronics Co.,Ltd Prepared on April. 17th, 2012 Prepared: R |
 GOOD-ARK |
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| MBRP40045CTL | POWERTAP II SWITCHMODE Power Rectifier MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRP40045CTL, D
Advance Information POWERTAP II™
SWITCHMODE™ Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Features: Dual Diod |
 Motorola Semiconductors |
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| MBRF745 | SWITCHMODE Schottky Power Rectifirer MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRF745, D
SWITCHMODE™ Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide p |
Motorola Semiconductors |
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| MBRM3100-13 | 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITE3 |  Diodes Incorporated |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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