MBRF2090CTの購入情報と機能
| この部品の機能は「SCHOTTKY BARRIER RECTIFIER」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
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| MBRF2090CT Rectifier | SCHOTTKY BARRIER RECTIFIER MBRF2020CT THRU MBRF20100CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes
15.0± 0.5
ITO-220AB
10.2± 0.2
4.5± 0.2 3.1+-00..12
16.5± 0.3 3 .3± 0.1
8.2± 0.2 3 .2± 0.2
PIN 1 23
4.0± 0.3
1.4± 0.1 0.6± 0.1
2.6± 0.2
2.6± 0.15
PIN 1 PIN 3
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MDD |
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| MBRF2090CT Rectifier | Dual High-Voltage Schottky Rectifiers |
Vishay Siliconix |
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| MBRF2090CT Rectifier | DUAL SCHOTTKY RECTIFIERS |
Galaxy Semi-Conductor |
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| MBRF2090CT Rectifier | Isolated Schottky Barrier Rectifiers |
Taiwan Semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBRS140LT3 | Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRS140LT3, D
Advance Information Surface Mount Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide pa |
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| MBRF10H100 | High Voltage Schottky Rectifier MBR(F,B)10H90, MBR(F,B)10H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AC ITO-220AC
Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop |
 Vishay |
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| MBR20020CTR | Schottky Power Diode Naina Semiconductor Ltd.
Features
Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR20020CT thru MBR20040CTR
Silicon Schottky Diode, 200A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse |
 Naina Semiconductor |
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| MBRH12020R | Silicon Power Schottky Diode MBRH12020 thru MBRH12040R
Silicon Power Schottky Diode
Features
High Surge Capability Types up to 100 V VRRM D-67 Package
VRRM = 20 V - 100 V IF = 120 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive peak reverse voltage RMS rev |
 GeneSiC |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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