MBRF2035の購入情報と機能
| この部品の機能は「Isolated 20.0 AMPS. Schottky Barrier Rectifiers」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBRT200100 | Silicon Power Schottky Diode MBRT20045 thru MBRT200100R
Silicon Power Schottky Diode
Features
High Surge Capability Types up to 100 V VRRM Isolation Type Package Three Tower Package
VRRM = 20 V - 100 V IF = 200 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetit |
![]() GeneSiC |
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| MBRB2530 | 25 Amp Schottky Barrier Rectifier 20 to 100 Volts MCC
Features
MBRB2520
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
THRU MBRB25100
25 Amp
Schottky
Meatl of Silicon Rectifier, Majority Conducton Guard ring for transient protection Low Forward Voltage Drop High Current Capability, High Efficiency Low Power |
![]() Micro Commercial Components |
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| MBR4035PT | Schottky Rectifier, Diode MBR4035PT THRU MBR4060PT
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts
TO-247AD
0.645 (16.4) 0.625 (15.9) 0.203 (5.16) 0.193 (4.90) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 10o 30o 0.078 REF (1.98)
Forward Current - 40.0 Amperes
FEATURES
0.170 (4.3) 0.840 (21.3) 0.820 (20.8)
10o TYP. |
General Semiconductor |
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| MBRA2H100T3G | Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier
SMA, SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vo |
ON Semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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