MBR4040CTの購入情報と機能
| この部品の機能は「40 AMPERES SCHOTTKY BARRIER RECTIFIERS」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBR2100 | SCHOTTKY DIE SPECIFICATION Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 100 V 2 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25°C @ 2 Ampe |
![]() ETC |
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| MBR12020R | SCHOTTKY DIODES Transys
Electronics
L I M I T E D
MBR12020(R) THRU MBR120100(R)
SCHOTTKY DIODES MODULE TYPE 120A
Features
High Surge Capability
Types Up to 100V V RRM
120Amp Rectifier 20-100 Volts HALF PACKAGE
Maximum Ratings
Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175 Part Number |
![]() TRANSYS |
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| MBRS130 | Schottky Power Rectifier(Surface Mount Power Package) MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRS130LT3, D
Schottky Power Rectifier
Surface Mount Power Package
. . . Employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxid |
Motorola Semiconductors |
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| MBRF1060CT-Y | Dual Common Cathode Schottky Rectifier MBRF1045CT-Y thru MBRF10200CT-Y
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC |
Taiwan Semiconductor |
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