MBR352の購入情報と機能
| この部品の機能は「TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBRM140 | Surface Mount Schottky Power Rectifier MBRM140 Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop- reverse current tradeoff. The advanced packaging techniques |
ON Semiconductor |
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| MBRD550 | Schottky Barrier Rectifier 20 to 100 Volts 5.0 Amp MCC
Features
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MBRD520 THRU MBRD5100
5.0 Amp
Schottky
Meatl of Silico n Rectifier, Majority Con duct on For sur face mo unted app li catio ns Low Forward Voltage Drop High Current Capability , High Eff iciency Low |
![]() Micro Commercial Components |
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| MBRF50 | SCHOTTKY ISOLATED PLASTIC RECTIFIER NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
MBRF735 THRU MBRF760
SCHOTTKY ISOLATED PLASTIC RECTIFIER
Reverse Voltage - 35 to 60 Volts
ITO-220AC
0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08)
Forward Current - 7 |
General Semiconductor |
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| MBR2515L | SWITCHMODE Power Rectifier MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2515L, D
Advance Information SWITCHMODE™ Power Rectifier
. . . employing the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and m |
Motorola Semiconductors |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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