MBM29LV160TMの購入情報と機能
| この部品の機能は「(MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| MBM29LV160TM CMOS | (MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20906-3E
FLASH MEMORY
CMOS
16 M (2M × 8, 1M × 16) BIT
MirrorFlashTM*
MBM29LV160TM, BM 90
s DESCRIPTION
The MBM29LV160TM, BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM, BM is offered in 4 |
Fujitsu Media Devices |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| MBM29DL164BE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M × 8, 1M × 16) BIT
MBM29DL16XTE, BE -70, 90, 12
s FEATURES
Dual Operation
0.23 m Process Technology Simultaneous Read, Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table |
Fujitsu Media Devices |
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| MBM200JS12AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
4- φ 6.5
20
108 93 18
20
4 |
 Hitachi |
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| MBM29BS32LF18 | BURST MODE FLASH MEMORY CMOS 32M (2M x 16) BIT
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20913-2E
BURST MODE FLASH MEMORY
CMOS
32M (2M × 16) BIT
MBM29BS, BT32LF 18, 25
s GENERAL DESCRIPTION
The MBM29BS, BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a |
Fujitsu Media Devices |
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 Fujitsu |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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