K5A65Dの購入情報と機能
| この部品の機能は「TK5A65D」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| K5A65D Data | TK5A65D TK5A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK5A65D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: Yfs = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhance |
Toshiba |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K5A3340YTC-T855 | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8, 2Mx16) Dual Bank NOR Flash Memory , 4M(512Kx8, 256Kx16) Full CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
November 6, 2002
Remark
Preliminary
The attached datasheets ar |
 Samsung semiconductor |
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| K5A60D | 600V, 5A, N-Channel MOSFET, TK5A60D Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) |
Toshiba |
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| K5A3240YBC-T855 | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8, 2Mx16) Dual Bank NOR Flash Memory , 4M(512Kx8, 256Kx16) Full CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
November 6, 2002
Remark
Preliminary
The attached datasheets ar |
Samsung semiconductor |
|
| K5A3340YBC-T755 | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8, 2Mx16) Dual Bank NOR Flash Memory , 4M(512Kx8, 256Kx16) Full CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
November 6, 2002
Remark
Preliminary
The attached datasheets ar |
Samsung semiconductor |
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