K4S64323LH-FNの購入情報と機能
| この部品の機能は「512K x 32Bit x 4 Banks Mobile SDRAM」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| K4S64323LH-FN Data | 512K x 32Bit x 4 Banks Mobile SDRAM K4S64323LH - F(H)E, N, G, C, L, F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
2.5V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (S |
Samsung semiconductor |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K4S640832E-TL75 | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL K4S640832E
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.0.1 Sept. 2001
K4S640832E
2M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V |
Samsung semiconductor |
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| K4S283233F-FHE | 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4S283233F - F(H)E, N, G, C, L, F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst ty |
Samsung semiconductor |
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| K4S161622H-TC70 | 16Mb H-die SDRAM Specification SDRAM 16Mb H-die(x16)
CMOS SDRAM
16Mb H-die SDRAM Specification
Revision 1.5 August 2004
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.5 August 2004
SDRAM 16Mb H-die(x16)
Revision History
Revision 0.0 (May, 2003) - Target spec release. Revisi |
Samsung semiconductor |
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| K4S643232E-TI70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL K4S643232E-TI, P
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature
Revision 1.2 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.2 (Oct. 2001)
K4S643232E-TI, P
Revision History
Revisi |
Samsung semiconductor |
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