K4S281632M-TL80の購入情報と機能
| この部品の機能は「128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| K4S281632M-TL80 Data | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S281632M
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V po |
Samsung semiconductor |
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PDF and Buy Now
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K4S643232F-TL55 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL K4S643232F
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.0 January 2002
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.0 (Jan. 2002)
K4S643232F
Revision History
Revision 1.0 (January 16, 2002)
Defined |
Samsung semiconductor |
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| K4S640832E | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL K4S640832E
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Sept. 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.0.1 Sept. 2001
K4S640832E
2M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V |
Samsung semiconductor |
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| K4S643232E-TC70 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL K4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.3 October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
Revision 1.3 (October 24, 2000)
Removed |
Samsung semiconductor |
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| K4S563233F | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4S563233F - F(H)E, N, G, C, L, F
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst ty |
Samsung semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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