K4S281632C-TL75の購入情報と機能
| この部品の機能は「128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL」です。 |
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製品の詳細 ( データシート PDF )

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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K4S283233F-F1L | 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4S283233F - F(H)E, N, G, C, L, F
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst ty |
Samsung semiconductor |
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| K4S161622E-TC70 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
3.3V power supply L |
Samsung semiconductor |
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| K4S561633C-P1H | 16Mx16 SDRAM 54CSP K4S561633C-R(B)L, N, P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD, VDDQ 3.0V, 3.0V or 3.3V, 3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B)L, N, P
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP
FEATURES
3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four ba |
Samsung semiconductor |
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| K4S281632F-UL60 | 128Mb F-die SDRAM SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
128Mb F-die SDRAM Specification
t4U.com54 TSOP-II with Pb-Free e(RoHS compliant)
w.DataSheRevision 1.2 ww August 2004
he* Samsung Electronics reserves the right to change products or specification without notice. www.DataSRev. 1.2 August 2004
SDRAM 128Mb |
Samsung semiconductor |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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