K2973の購入情報と機能
| この部品の機能は「N-Channel MOSFET, 2SK2973」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| K2973 Data | N-Channel MOSFET, 2SK2973 MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF, UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX
FEATURES
High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
High efficiency:55% typ. Source case type SOT-89 packag |
Mitsubishi |
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関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K2957 | N-Channel MOSFET, 2SK2957 2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
Low on-resistance RDS(on) = 7 mΩ typ. 4 V gate drive devices. High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPA |
 Renesas |
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| K2995 | N-Channel MOSFET, 2SK2995 2SK2995
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV)
2SK2995
Chopper Regulator, DC DC Converter and Motor Drive Applications
l Low drain source ON resistance l High forward transfer admittance l Low leakage current l Enhancement mode : : RDS (ON) = 48 mΩ (typ.) : |Yfs| = 3 |
 Toshiba Semiconductor |
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| K2929 | N-Channel MOSFET, 2SK2929 2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS =0.026 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2929 |
 Hitachi Semiconductor |
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| K2961 | 60V, 2A, N-Channel MOSFET, 2SK2961 - Low drain source ON resistance - High forward transfer admittance: RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.) - Low leakage current : IDSS = 100 μA (VDS = 60 V) - Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) |
Toshiba Semiconductor |
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