K2008の購入情報と機能
| この部品の機能は「Silicon N-Channel MOS FET」です。 |
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製品の詳細 ( データシート PDF )
| 部品番号 | 部品情報 | メーカー | PDF / カテゴリー |
|---|---|---|---|
| K2008 MOSFET | Silicon N-Channel MOS FET 2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
D G1
2 3 1. Gate 2. Drain 3. Source
S
2SK2008
Ab |
Hitachi Semiconductor |
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PDF File Download
関連検索結果
| 部品番号 | 部品情報 | メーカー | |
|---|---|---|---|
| K20J60U | 600V, 20A, MOSFET, TK20J60U Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) |
 Toshiba Semiconductor |
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| K2000-R | N-Channel MOSFET, 2SK2000-R |
 Fuji Electric |
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| K20P64M72SF1 | K20 Sub-Family Freescale Semiconductor Data Sheet: Technical Data
Document Number: K20P64M72SF1 Rev. 3, 11, 2012
K20 Sub-Family
K20P64M72SF1
Supports: MK20DX64VLH7, MK20DX128VLH7, MK20DX256VLH7
Features Operating Characteristics Voltage range: 1.71 to 3.6 V Flash write voltage range: 1.71 to 3.6 V Temperat |
 Freescale Semiconductor |
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| K2071-01 | N-Channel MOSFET, 2SK2071-01 2SK2071-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
6,5Ω
2A
20W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Pu |
Fuji Electric |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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